Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With switching speed enhancement means
Patent
1996-09-27
1999-03-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With switching speed enhancement means
257109, 257113, 257131, 257611, 257617, 257913, H01L 2974, H01L 31111
Patent
active
058834036
ABSTRACT:
In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of the carrier density in the conduction state can be flattened, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.
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patent: 4195306 (1980-03-01), Fullmann et al.
patent: 4500902 (1985-02-01), Herberg
patent: 5001535 (1991-03-01), Nishizawa et al.
patent: 5075751 (1991-12-01), Tomii et al.
Wolf et al., Silicon Processing for the VSLI Era (vol. 1: Process Technology), Silicon: Single Crystal Growth and Wafer Preparation (Trends in Silicon Crystal Growth and VSLI Wafers, pp. 32-33, 1986.
Ishikawa Katsumi
Katoh Shuji
Momma Naohiro
Saito Katsuaki
Sato Yutaka
Hitachi , Ltd.
Ngo Ngan V.
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