Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-01-09

2007-01-09

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S328000

Reexamination Certificate

active

10961135

ABSTRACT:
The power semiconductor device according to one embodiment of the present invention at least comprises: first pillar layers of the first conductive type and second pillar layers of a second conductive type which constitute a super-junction structure in a device section and which are arranged alternately in a horizontal direction, each of the first and second pillar layers having a column-shaped sectional structure; third pillar layers of the first conductive type and fourth pillar layers of the second conductive type which are adjacent to the super-junction structure of the device section to constitute another super-junction structure thinner in a vertical direction than the super-junction structure of the device section in a device termination section and which are arranged alternately in a horizontal direction, each of the third and fourth pillar layers having a column-shaped sectional structure; an outermost pillar layer which is stacked on one of the third or fourth pillar layers in the super-junction structure of the device termination section nearest to the device section to be additionally formed to an outermost portion of the super-junction structure of the device section nearest to the device termination section and which has an impurity concentration less than that of each of the first and second pillar layers; a high resistance layer of the first conductive type which is formed on the third pillar layers and the fourth pillar layers and has a resistance value higher than that of each of the first and second pillar layers.

REFERENCES:
patent: 6410958 (2002-06-01), Usui et al.
patent: 6740931 (2004-05-01), Kouzuki et al.
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 6878989 (2005-04-01), Izumisawa et al.
patent: 6888195 (2005-05-01), Saito et al.
patent: 6995426 (2006-02-01), Okumura et al.
patent: 7023050 (2006-04-01), Salama et al.
patent: 2002/0063259 (2002-05-01), Usui et al.
patent: 2002/0175368 (2002-11-01), Izumisawa et al.
patent: 2003/0122222 (2003-07-01), Okumura et al.
patent: 2003/0222327 (2003-12-01), Yamaguchi et al.
patent: 2004/0012038 (2004-01-01), Kouzuki et al.
patent: 2004/0056306 (2004-03-01), Saito et al.
patent: 2004/0238844 (2004-12-01), Tokano et al.
patent: 2005/0017300 (2005-01-01), Salama et al.
patent: 2005/0098826 (2005-05-01), Yamaguchi et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2005/0170587 (2005-08-01), Izumisawa et al.
patent: 2005/0224945 (2005-10-01), Saito et al.
patent: 2005/0253187 (2005-11-01), Kawamura
patent: 2005/0280086 (2005-12-01), Saito et al.
patent: 2006/0006458 (2006-01-01), Motai et al.
patent: 2006/0011962 (2006-01-01), Kocon
patent: 2006/0108600 (2006-05-01), Okumura et al.
patent: 2006/0138536 (2006-06-01), Kouzuki et al.
patent: 2006/0145290 (2006-07-01), Okumura et al.
patent: 2000-277726 (2000-10-01), None
patent: 2003-115589 (2003-04-01), None

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