Power semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S331000, C257S332000, C257S335000, C257SE21585

Reexamination Certificate

active

11102851

ABSTRACT:
A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of a second conductivity type selectively formed in a surface portion of the barrier layer, a source layer of the first conductivity type selectively formed in the surface portion of the barrier layer so as to contact the contact layer and a side wall of the gate insulating film in the trench, and a first main electrode formed so as to contact the contact layer and the source layer.

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patent: 6815767 (2004-11-01), Nakamura et al.
patent: 11-274484 (1999-10-01), None
H. Takahashi, et al., Proceedings of 2001 International Symposium of Power Semiconductor Devices & ICs, pp. 445-448, “600V CSTBT Having Ultra Low On-State Voltage”, 2001.

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