Power semiconductor device

Details Power semiconductor device Power semiconductor device

2005-08-30

2005-08-30

Neims, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S133000

Reexamination Certificate

active

06936893

ABSTRACT:
The power semiconductor device includes a plurality of trenches disposed in a surface of a semiconductor active layer to reach a first base layer of a first conductivity type. The trenches are disposed at intervals to partition a main cell and a dummy cell. In the main cell, a second base layer of a second conductivity type and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode and gate insulating film are disposed in each trench. A partition structure is disposed in the surface of the semiconductor active layer to electrically isolate the buffer layer from the emitter electrode.

REFERENCES:
patent: 5525824 (1996-06-01), Himi et al.
patent: 5585651 (1996-12-01), Kitagawa et al.
patent: 6445048 (2002-09-01), Pfirsch
U.S. Appl. No. 10/814,246, filed Apr. 1, 2004, Okuno et al.

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