Power semiconductor device

Details Power semiconductor device Power semiconductor device

2008-01-08

2008-01-08

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S328000

Reexamination Certificate

active

07317225

ABSTRACT:
The power semiconductor device according to one embodiment of the present invention at least comprises: first pillar layers of the first conductive type and second pillar layers of a second conductive type which constitute a super-junction structure in a device section and which are arranged alternately in a horizontal direction, each of the first and second pillar layers having a column-shaped sectional structure; third pillar layers of the first conductive type and fourth pillar layers of the second conductive type which are adjacent to the super-junction structure of the device section to constitute another super-junction structure thinner in a vertical direction than the super-junction structure of the device section in a device termination section and which are arranged alternately in a horizontal direction, each of the third and fourth pillar layers having a column-shaped sectional structure; an outermost pillar layer which is stacked on one of the third or fourth pillar layers in the super-junction structure of the device termination section nearest to the device section to be additionally formed to an outermost portion of the super-junction structure of the device section nearest to the device termination section and which has an impurity concentration less than that of each of the first and second pillar layers; a high resistance layer of the first conductive type which is formed on the third pillar layers and the fourth pillar layers and has a resistance value higher than that of each of the first and second pillar layers.

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