Power semiconductor device

Details Power semiconductor device Power semiconductor device

2011-08-30

2011-08-30

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S127000, C257S490000

Reexamination Certificate

active

08008734

ABSTRACT:
A power semiconductor device is provided having a field plate that employs a thick metal film in an edge termination structure and which permits edge termination structure width reduction even with large side etching or etching variation, which exhibits superior long-term forward blocking voltage capability reliability, and which allows minimal forward blocking voltage capability variation. The edge termination structure has multiple ring-like p-type guard rings, a first insulating film covering the guard rings, and ring-like field plates, provided via the first insulating film atop the guard rings. The field plates have a polysilicon film and a thicker metal film. The polysilicon film is provided on a first guard ring via first insulating film, and a dual field plate made of the polysilicon film and metal film is provided on a second guard ring. The dual field plate is stacked via a second insulating film. The first and second guard rings alternate.

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First Office issued in corresponding Chinese Patent Application No. 200810003433.7 dated Jun. 11, 2010. Japanese translation of Chinese action provided, English translation of Japanese translation provide.

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