Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-18
2000-10-24
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, H01L 2976
Patent
active
06137136&
ABSTRACT:
An injection enhanced insulated gate bipolar transistor is disclosed in which an average roughness of silicon on the side and bottom surfaces of trench grooves below a gate oxide film is made to be 0.6 nm or smaller. Irregular portions on the surface of silicon of the gate oxide film can be prevented. Thus, lowering of the gate breakdown voltage occurring because of dispersion of the thickness of the gate oxide film due to the irregular portions can be prevented.
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Mitsuhiko Kitagawa, et al., "A 4500 V Injection Enhanced Insulated Gate Bipolar Transistor (IEGT) Operating in a Mode Similar to a Thyristor", IEDM Technical Digest, (1993), pp. 679-682.
Inoue Tomoki
Omura Ichiro
Urano Satoshi
Yahata Akihiro
Kabushiki Kaisha Toshiba
Nadav Ori
Thomas Tom
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