Power semiconductor component with monolithically integrated sen

Details Power semiconductor component with monolithically integrated sen Power semiconductor component with monolithically integrated sen

1995-09-29

1997-09-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257328, 257341, 257379, 257469, H01L 2358

Patent

active

056635745

ABSTRACT:
The subject matter of the application is directed to a power semiconductor component, whereby, in addition to a load transistor, a plurality of transistors and resistors are monolithically integrated and form respective current mirrors together with the load transistor. Advantageously, resistors of polysilicon are produced simultaneously with gate electrodes, and resistors of aluminum are produced simultaneously with a contacting layer. A largely independent measurement of the load current, of the semiconductor temperature, and of the saturation voltage of the load transistor as well as an improvement in the measuring precision are possible as a result of the subject matter of the application.

REFERENCES:
patent: 4472678 (1984-09-01), Lauriello
patent: 5153696 (1992-10-01), Kayama
patent: 5237262 (1993-08-01), Ashley et al.
Arlt, "IGBT--Technik Vom Erfinder", Elektronik Industrie 1, 1991, pp. 14-18 .

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