Power semiconductor component with increased robustness

Details Power semiconductor component with increased robustness Power semiconductor component with increased robustness

2007-12-04

2007-12-04

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S750000

Reexamination Certificate

active

11081787

ABSTRACT:
The invention relates to a power semiconductor component with increased robustness, in which a contact layer (13, 14) applied directly to a main surface (7, 11) of the semiconductor body (1) is composed of a metal (13) having a high melting point or of a thin aluminum layer (14), the layer thickness of which preferably lies between 1 and 5 nm. This contact layer is reinforced with a customary multilayer metallization system (15). The aluminum layer may, if appropriate, be patterned (14′).

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