Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-10-25
2009-06-30
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S328000, C257S329000, C257SE29183, C257SE29131
Reexamination Certificate
active
07554137
ABSTRACT:
A semiconductor component (1) with charge compensation structure (3) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
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Mauder Anton
Pfirsch Frank
Schulze Hans-Joachim
Sedlmaier Stefan
Strack Helmut
Eschweiler & Associates LLC
Infineon Technologies Austria AG
Mandala Victor A
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