Power semiconductor component

Details Power semiconductor component Power semiconductor component

2007-11-06

2007-11-06

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S171000, C257S328000, C257S329000, C257S330000, C257SE29257

Reexamination Certificate

active

10941421

ABSTRACT:
A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region adjoining the first conduction type region at the third surface. A trench extending from the first surface into the semiconductor body, the trench defined by a trench bottom and an arcuately shaped sidewall.

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patent: 6333519 (2001-12-01), Nakazawa
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patent: 6818939 (2004-11-01), Hadizad
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patent: 2002/0113263 (2002-08-01), Fujishima et al.
patent: 2002/0185680 (2002-12-01), Henninger et al.
patent: 2003/0022474 (2003-01-01), Grover et al.

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