Power-saving reading of magnetic memory devices

Details Power-saving reading of magnetic memory devices Power-saving reading of magnetic memory devices

2005-05-10

2005-05-10

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189070, C365S189110, C365S213000

Reexamination Certificate

active

06891768

ABSTRACT:
Power-saving reading of magnetic memory devices. In one arrangement, a method includes pulsing a voltage on the array, and obtaining a voltage value indicative of a memory state of the target memory cell from the voltage pulse using a sensing circuit that is electrically connected to the target memory cell. In another arrangement, a method includes pulsing an array voltage on a plurality of row and column conductors of the array, connecting a sensing circuit to a conductor that is electrically coupled to the target memory cell, the sensing circuit including a sense element, and determining the voltage drop across the sense element of the sensing circuit during the voltage pulse, the voltage drop being indicative of a memory state of the target memory cell.

REFERENCES:
patent: 5258669 (1993-11-01), Nakashima
patent: 5400279 (1995-03-01), Momodomi et al.
patent: 6504750 (2003-01-01), Baker
patent: 6590804 (2003-07-01), Perner
patent: 6625076 (2003-09-01), Weber et al.

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