Power sag detection and control in ion implanting system

Details Power sag detection and control in ion implanting system Power sag detection and control in ion implanting system

2006-06-27

2006-06-27

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S492100

Reexamination Certificate

active

07067829

ABSTRACT:
In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

REFERENCES:
patent: 6590216 (2003-07-01), Doran et al.
patent: 6791096 (2004-09-01), Komuro et al.
patent: 2002/0175292 (2002-11-01), Whitehouse et al.

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