Power rate enhancement circuit for an RF power amplifier in...

Details Power rate enhancement circuit for an RF power amplifier in... Power rate enhancement circuit for an RF power amplifier in...

2005-09-27

2005-09-27

Tieu, Binh (Department: 2643)

Telecommunications

Transmitter

Power control, power supply, or bias voltage supply

C455S121000, C455S129000, C455S132000

Reexamination Certificate

active

06950637

ABSTRACT:
There is provided a power rate enhancement circuit for a power amplifier in a dual mode mobile phone including an RF power amplifier for amplifying an RF input signal, a duplexer connected to an antenna, and an isolator connected to the duplexer. The power enhancement circuit also comprises: a CDMA matching circuit connected to an output end of the RF power amplifier, for matching an output impedance of the RF power amplifier in a CDMA mode of operation; an AMPS matching circuit connected to the output end of the RF power amplifier, for matching the output impedance of the RF power amplifier in an AMPS mode of operation; and an RF switch for selecting the CDMA matching circuit or the AMPS matching circuit according to a mode control signal. The CDMA matching circuit comprises an inductor connected between the output end of the RF power amplifier and the isolator. The AMPS matching circuit comprises a capacitor connected between the RF switch and a contact point formed between the inductor and the isolator.

REFERENCES:
patent: 5880631 (1999-03-01), Sahota
patent: 6128508 (2000-10-01), Francisco et al.
patent: 6188877 (2001-02-01), Boesch et al.
patent: 6300827 (2001-10-01), King
patent: 6313698 (2001-11-01), Zhang et al.
patent: 6317608 (2001-11-01), Glocker
patent: 6389269 (2002-05-01), Nanni et al.
patent: 6606483 (2003-08-01), Baker et al.

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