Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-05-28
1993-08-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
361 56, 361 58, 361 91, 361111, 257360, 257363, 257369, H01L 2978
Patent
active
052373959
ABSTRACT:
An electrostatic discharge (ESD) protection circuit for protecting internal devices of an integrated circuit is coupled between the power rails of the integrated circuit. First and second current shunt paths between the power rails are maintained non-conductive during normal circuit operation and are triggered to a conductive mode in response to an ESD event on the power rails. A triggering circuit may employ a logic gate, such as an inverter with its input coupled to the positive power rail, which maintains a low level output during normal operation and provides a high output in response to an ESD event on the power rail.
REFERENCES:
patent: 4990802 (1991-02-01), Smooha
patent: 5021853 (1991-06-01), Mistry
patent: 5051860 (1991-09-01), Lee et al.
L. Avery, "Electrostatic Discharge: Mechanisms, Protection Techniques, and Effects on Integrated Circuit Reliability", RCA Laboratories, Princeton, N.J., Jun. 1983, pp. 291-302.
C. Duvvury, et al., "Internal Chip ESD Phenomena Beyond the Protection Circuit", 1988 IEEE/IRPS, pp. 19-25.
A. Ochoa, et al., "Snap-Back: A Stable Regenerative Breakdown Mode of MOS Devices", IEEE Transactions on Nuclear Science, vol. NS-30, No. 6, Dec., 1983, pp. 4127-4130.
Hille Rolf
Loke Steven
Western Digital Corporation
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