Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-20
1998-12-01
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257342, H01L 2976, H01L 2994, H01L 31062
Patent
active
058442774
ABSTRACT:
A MOSFET device formed in a semiconductor chip with a top surface and a bottom surface. The MOSFET device includes a drain region doped with impurities of a first conductivity type, formed near the bottom surface. The MOSFET device further includes a plurality of vertical cells wherein each of the vertical cell includes a vertical pn-junction zone region includes a lower-outer body region, doped with impurities of a second conductivity type, formed on top of the drain region. The pn-junction region further includes a source region, doped with impurities of the first conductivity type, formed on top of the lower-outer body region, the lower-outer body region surrounding the source region and extending to the top surface thus defining a cell area for the cell. The vertical cell further includes a source contact formed on the top surface contacting the source region. The MOSFET further includes a plurality of gates. Each gate is formed on the top surface as a poly layer extending from an area near a boundary of the source region and the lower-outer body region of one of the cells to a neighboring cell, the gate includes a thin insulative bottom layer for insulating from the vertical cell, the gate is provided for applying a voltage thereon for controlling a charge state of a channel underneath each of the gates thus controlling a vertical current from the source contact to the drain region. The MOSFET device further includes a plurality of open stripes whereby a width of the channel is increased and a JFET resistance for each of the vertical cells is decreased.
REFERENCES:
patent: 5016066 (1991-05-01), Takahashi
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5151762 (1992-09-01), Uenishi et al.
patent: 5321295 (1994-06-01), Hisamoto
patent: 5408118 (1995-04-01), Yamamoto
Hshieh Fwu-Iuan
Lin True-Lon
Fahmy Wael
Lin Bo-In
MagePower Semiconductor Corp.
LandOfFree
Power MOSFETs and cell topology does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power MOSFETs and cell topology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOSFETs and cell topology will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2397662