Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2006-03-28
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S327000, C257S335000, C438S284000, C438S286000
Reexamination Certificate
active
07019362
ABSTRACT:
The gate resistance of a power MOSFET in a semiconductor chip is reduced and the reliability and yield of the gate of the power MOSFET are improved The semiconductor chip includes two or more control electrode pads functioning as control electrodes for a power semiconductor device formed within a semiconductor chip. The two or more control electrode pads are distributed within the periphery of the gate area of the power semiconductor device such that the gate resistance of the power semiconductor device can be reduced. The two or more control electrode pads are connected via bumps or a conductive bonding material to an electrode layer of a multilayer circuit board disposed outside the semiconductor chip.
REFERENCES:
patent: 6278264 (2001-08-01), Burstein et al.
Iwasaki Takayuki
Sakamoto Kozo
Shiraishi Masaki
Dickstein , Shapiro, Morin & Oshinsky, LLP
Pert Evan
Renesas Technology Corp.
Wilson Scott R.
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