Power MOSFET with recessed field plate

Details Power MOSFET with recessed field plate Power MOSFET with recessed field plate

2007-09-25

2010-11-30

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29131, C257SE29183, C257SE29189, C370S466000

Reexamination Certificate

active

07843004

ABSTRACT:
A trench MOSFET contains a recessed field plate (RFP) trench adjacent the gate trench. The RFP trench contains an RFP electrode insulated from the die by a dielectric layer along the walls of the RFP trench. The gate trench has a thick bottom oxide layer, and the gate and RFP trenches are preferably formed in the same processing step and are of substantially the same depth. When the MOSFET operates in the third quadrant (with the source/body-to-drain junction forward-biased), the combined effect of the RFP and gate electrodes significantly reduces in the minority carrier diffusion current and reverse-recovery charge. The RFP electrode also functions as a recessed field plates to reduce the electric field in the channel regions when the MOSFET source/body to-drain junction reverse-biased.

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