Power MOSFET with improved avalanche resistance

Details Power MOSFET with improved avalanche resistance Power MOSFET with improved avalanche resistance

1993-08-10

1995-05-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257490, H01L 29784, H01L 2991

Patent

active

054183944

ABSTRACT:
A power MOSFET with improved avalanche resistance has a cell field in which the lateral cells are provided with source zones which are partly omitted or of a reduced size. The avalanche resistance is further improved in terms of reduced manufacturing cost in that a p-doped annular zone is disposed between the cell field and the edge of the semiconductor body. An annular trench is formed in the annular zone. The annular trench is contacted with the source metallization. The annular zone and the annular trench have the same depth as the gate zones of the cells and/or as the source contact holes.

REFERENCES:
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5047813 (1991-09-01), Harada
European Search Report.

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