Power MOSFET with a gate structure of different material

Details Power MOSFET with a gate structure of different material Power MOSFET with a gate structure of different material

2011-05-17

2011-05-17

Thomas, Tom (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S331000, C257S407000, C257SE29256, C257SE29257, C257SE29258, C257SE29259, C257SE29260, C257SE29261, C257SE21417, C257SE21418, C257SE21421, C438S156000, C438S157000, C438S197000, C438S212000

Reexamination Certificate

active

07943988

ABSTRACT:
A semiconductor device includes a semiconductor layer of a first conductivity type and a first doping concentration. A first semiconductor region, used as drain, of the first conductivity type has a lower doping concentration than the semiconductor layer and is over the semiconductor layer. A gate dielectric is over the first semiconductor region. A gate electrode over the gate dielectric has a metal-containing center portion and first and second silicon portions on opposite sides of the center portion. A second semiconductor region, used as a channel, of the second conductivity type has a first portion under the first silicon portion and the gate dielectric. A third semiconductor region, used as a source, of the first conductivity type is laterally adjacent to the first portion of the second semiconductor region. The metal-containing center portion, replacing silicon, increases the source to drain breakdown voltage.

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