Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S335000, C257S341000, C257S506000, C257S505000, C257S520000
Reexamination Certificate
active
06878989
ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, on which a semiconductor layer having a trench extending in the depth direction toward the semiconductor substrate is formed. A first region of the first conductivity type is formed in the depth direction along one side of the trench in the semiconductor layer and contacts the semiconductor substrate. A second region of the first conductivity type is formed in a surface area of the semiconductor layer and close to the trench and contacts the first region. A third region of the second conductivity type is formed in the surface area of the semiconductor layer. A fourth region of the first conductivity type is formed in a surface area of the third region. A gate insulation film and a gate electrode are provided on the surface of the third region between the second region and the fourth region.
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Hodama Shinichi
Izumisawa Masaru
Kouzuki Shigeo
Eckert George
Lee Eugene
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