Power mosfet including inter-source connection pattern

Details Power mosfet including inter-source connection pattern Power mosfet including inter-source connection pattern

2011-05-17

2011-05-17

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257SE27060

Reexamination Certificate

active

07944001

ABSTRACT:
A power metal oxide silicon field effect transistor in which sources are connected to each other, a single source supplies electrons to two channels, a contact surface between the source and a channel is variously changed to be maximized such that large current flows in a small area, and an electrical field is not concentrated to a gate edge.

REFERENCES:
patent: 2007/0045727 (2007-03-01), Shiraishi et al.
patent: 8-162637 (1996-06-01), None
patent: 11-111976 (1999-04-01), None
patent: 2001-94101 (2001-04-01), None
patent: 2001-352063 (2001-12-01), None
patent: 2002-50760 (2002-02-01), None
patent: 2005-209731 (2005-08-01), None

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