Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S488000
Reexamination Certificate
active
06853033
ABSTRACT:
A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
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Gan Kian Paau
Liang Yung Chii
Samudra Ganesh Shankar
Yang Xin
DInsmore & Shohl LLP
National University of Singapore
Prenty Mark V.
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