Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-09
1998-06-16
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257368, 323316, 327427, H01L 2976
Patent
active
057675457
ABSTRACT:
A power MOSFET includes a main MOSFET connected in series with a load resistor between a high voltage power supply voltage and ground, and a series circuit connected in parallel to the main MOSFET and composed of a sensing MOSFET and a converting MOSFET for converting a shunted current flowing through the sensing MOSFET into a detected voltage signal, which is supplied to one input of an operational amplifier. A gate of the main MOSFET and a gate of the sensing MOSFET are connected in common to an output of a gate drive circuit. The other input of the operational amplifier is connected to a reference voltage, so that the detected voltage signal is compared with the reference voltage. An output of the operational amplifier is fed back to the gate drive circuit, so that the gate drive circuit controls a gate voltage supplied to the gate of the main MOSFET and the gate of the sensing MOSFET, in order to prevent an overcurrent from flowing through the power MOSFET.
REFERENCES:
patent: 4553084 (1985-11-01), Wrathall
patent: 4908682 (1990-03-01), Takahashi
patent: 4962411 (1990-10-01), Tokura, et al.
patent: 5153696 (1992-10-01), Kayama
patent: 5422593 (1995-06-01), Fujihira
NEC Corporation
Prenty Mark V.
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