Power mosfet having conductor plug structured contacts

Details Power mosfet having conductor plug structured contacts Power mosfet having conductor plug structured contacts

2007-02-13

2007-02-13

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S337000, C257S338000, C257S377000, C257S382000, C257S383000

Reexamination Certificate

active

10921327

ABSTRACT:
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs13(P1) for leading out electrodes on a source region10,a drain region9and leach-through layers3(4), to which a first layer wirings11a,11d(M1) are connected and, further, backing second layer wirings12ato12dare connected on the conductor plugs13(P1) to the first layer wirings11s,11d(M1).

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