Power MOSFET having a drain heterojunction

Details Power MOSFET having a drain heterojunction Power MOSFET having a drain heterojunction

1997-09-08

1999-08-17

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257192, 257342, 257343, 257401, H01L 2968

Patent

active

059397543

ABSTRACT:
There is provided a power MOSFET in which a plurality of base regions are formed on a surface of a semiconductor region serving as a drain region, convex drain regions are formed on the semiconductor region, and a part of the convex drain regions is formed of wide bandgap semiconductor having a bandgap wider than that of the semiconductor region. The wide bandgap semiconductor is connected to the drain electrodes and a part of the convex drain regions has a structure sandwiched by gate electrodes. If the semiconductor region is formed of silicon, silicon carbide (SiC) is representatively preferable material as the wide bandgap semiconductor.

REFERENCES:
patent: 4890142 (1989-12-01), Tonnel et al.
patent: 4980303 (1990-12-01), Yamauchi
patent: 4990982 (1991-02-01), Omoto et al.
patent: 5510275 (1996-04-01), Malhi
patent: 5734180 (1998-03-01), Malhi
Patent Abstract No. 63-47987 p. 16 E 637, Feb. 1988.

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