Power MOSFET device having low on-resistance and method

Details Power MOSFET device having low on-resistance and method Power MOSFET device having low on-resistance and method

1997-11-03

2000-07-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257341, H01L 2976, H01L 2994, H01L 31062

Patent

active

060842687

ABSTRACT:
A power MOSFET device (40) includes one or more localized regions of doping (61,62,63) formed in a more lightly doped semiconductor layer (42). The one or more localized regions of doping (61,62,63) reduce inherent resistances between the source regions (47,48) and the drain region (41) of the device. The one or more localized regions of doping (61,62,63) are spaced apart from the body regions (44,46) to avoid detrimentally impacting device breakdown voltage. In an alternative embodiment, a groove (122) or trench (152) design is incorporated to reduce JFET resistance (34). In a further embodiment, a gate dielectric layer having a thick portion (77,97,128,158) and thin portions (76,126,156) is incorporated to enhance switching characteristics and/or breakdown voltage.

REFERENCES:
patent: 5273922 (1993-12-01), Tsoi
patent: 5438215 (1995-08-01), Tihanyi

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