Power MOSFET and methods of making same

Details Power MOSFET and methods of making same Power MOSFET and methods of making same

2006-10-24

2006-10-24

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C438S294000

Reexamination Certificate

active

07126197

ABSTRACT:
A method of forming a power MOSFET having a substrate of a first conductivity type and a body region of a second conductivity type. The method includes the steps of forming a gate region of a pre-determined pattern and with a plurality of gate elements partially covering the substrate. The gate element has a stepped cross-sectional profile with a thicker portion and a thinner portion. The thicker portion is adapted to substantially prevent passage of impurities therethrough into the substrate during the impurities implantation step. The thinner portion is adapted to allow partial passage of impurities therethrough during the impurities implantation step. Impurities are implanted into the substrate from the gate region side of the substrate to form a body region of the second conductivity type. After the impurities implantation step, a step-profiled body region, having a shallow body region and a deep body region, is formed in the substrate with impurities also present underneath pre-determined regions of the gate elements.

REFERENCES:
patent: 5120668 (1992-06-01), Hsu et al.
patent: 5960275 (1999-09-01), So et al.
patent: 6049104 (2000-04-01), Hshieh et al.
patent: 7056799 (2006-06-01), Phua et al.
patent: 2004/0097041 (2004-05-01), Mandelman et al.
patent: 2004/0113212 (2004-06-01), Lee et al.
patent: 2005/0186744 (2005-08-01), Abadeer et al.
patent: 2005/0227423 (2005-10-01), Phua et al.

Affiliated with

Also associated with

Rating

Power MOSFET and methods of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power MOSFET and methods of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOSFET and methods of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3699913