Power MOSFET and method of preparing the same

Details Power MOSFET and method of preparing the same Power MOSFET and method of preparing the same

1996-07-23

1998-11-03

Ostrowski, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

257288, 257328, H01L 2348, H01L 2352

Patent

active

058313389

ABSTRACT:
The power MOSFET includes a substrate of the power MOS type FET having a source electrode, a part of which corresponds to a source pad area formed directly thereon. The device also includes a bonding wire for connecting the source electrode to the outside. The bonding wire is melt-bonded on the source pad area by an ultra-sonic vibration having a frequency of about 50 to about 70 kHz.

REFERENCES:
patent: 4067039 (1978-01-01), Gaicki
patent: 4907734 (1990-03-01), Conrus et al.
patent: 5212396 (1993-05-01), Nakagawa et al.
patent: 5298793 (1994-03-01), Kotani et al.
patent: 5455442 (1995-10-01), Neilson et al.
patent: 5489793 (1996-02-01), Matsusako et al.
patent: 5539244 (1996-07-01), Mori et al.

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