Power MOSFET

Details Power MOSFET Power MOSFET

1994-03-25

1995-08-01

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257342, H01L 2978, H01L 29784, H01L 2994

Patent

active

054382157

ABSTRACT:
A power MOSFET includes a semiconductor body having first and second surfaces. An inner zone of a first conduction type has a given dopant concentration. At least one base zone of a second conduction type is adjacent the inner zone and the first surface. At least one source zone is embedded in the at least one base zone. At least one drain zone is adjacent one of the surfaces. Additional zones of the second conduction type are disposed in the inner zone inside a space charge zone developing when a blocking voltage is present. At least one additional zone of the first conduction type is disposed between the additional zones of the second conduction type and is doped higher than the inner zone. The additional zones have a dopant level and the additional zones of the second conduction type are mutually spaced apart, for depleting charge carriers when a blocking voltage is applied.

REFERENCES:
patent: 5323059 (1994-06-01), Rutter et al.

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