Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000
Reexamination Certificate
active
10618624
ABSTRACT:
A semiconductor device, and particularly an MOS transistor device, wherein in order to increase a channel region density and to achieve a low resistance of a transistor device there is provided a first gate electrode group having a plurality of gate electrodes formed on a semiconductor substrate to be away from each other at first equal spacings, a second gate electrode group having a plurality of gate electrodes formed on the semiconductor substrate to be away from each other at the first equal spacings, a source contact portion formed away from the first or the second gate electrode group at a second spacing, and source regions for electrically interconnecting the first gate electrode group and the source contact. The source regions are connected to each other at one end of the first gate electrode group, and separated at the other end of the first gate electrode group. In addition, the gate electrodes of the first group are connected each other at the other end. The second spacing is greater than the first spacing.
REFERENCES:
patent: 4663644 (1987-05-01), Shimizu
patent: 5714775 (1998-02-01), Inoue et al.
patent: 5889700 (1999-03-01), Bergemont et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6060747 (2000-05-01), Okumura et al.
patent: 6265744 (2001-07-01), Okumura
patent: 6396102 (2002-05-01), Calafut
patent: 6-169069 (1994-06-01), None
patent: 11-330466 (1999-11-01), None
Kawakatsu Masaru
Kobayashi Hitoshi
Matsuda Noboru
Osawa Akihiko
Cao Phat X.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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