Power MOS electronic device and corresponding realizing method

Details Power MOS electronic device and corresponding realizing method Power MOS electronic device and corresponding realizing method

2011-01-25

2011-01-25

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257S365000, C257SE29242, C257SE29255, C257SE29256, C257SE29257, C438S283000, C438S284000, C438S286000

Reexamination Certificate

active

07875936

ABSTRACT:
Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said lateral portions of reduced thickness to define, for the elementary MOS transistors, the gate electrodes, as well as a conductive structure or mesh. Such conductive structure comprising a plurality of second conductive portions overlapped onto the thick central part of gate oxide and interconnected to each other and to the first gate conductive portions by means of a plurality of conducive bridges.

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