Power MOS device with conductive contact layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S332000, C257S334000

Reexamination Certificate

active

07923774

ABSTRACT:
A semiconductor device includes a drain, a body disposed over the drain, a source embedded in the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench extending through the source into the body, a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source, and a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer.

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