Power MOS device

Details Power MOS device Power MOS device

2007-09-11

2009-10-20

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257S335000, C257S337000

Reexamination Certificate

active

07605425

ABSTRACT:
A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench having a trench wall and an anti-punch through implant that is disposed along the trench wall.

REFERENCES:
patent: 4156246 (1979-05-01), Pedersen
patent: 4521795 (1985-06-01), Coe et al.
patent: 4823172 (1989-04-01), Mihara
patent: 4967243 (1990-10-01), Baliga et al.
patent: 4967245 (1990-10-01), Cogan et al.
patent: 5111253 (1992-05-01), Korman et al.
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5378655 (1995-01-01), Hutchings et al.
patent: 5576245 (1996-11-01), Cogan et al.
patent: 5614749 (1997-03-01), Ueno
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5693569 (1997-12-01), Ueno
patent: 5886383 (1999-03-01), Kinzer
patent: 6037628 (2000-03-01), Huang
patent: 6110799 (2000-08-01), Huang
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6251730 (2001-06-01), Luo
patent: 6351018 (2002-02-01), Sapp
patent: 6359306 (2002-03-01), Ninomiya
patent: 6433396 (2002-08-01), Kinzer
patent: 6498071 (2002-12-01), Hijzen et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6638826 (2003-10-01), Zeng et al.
patent: 6686614 (2004-02-01), Tihanyi
patent: 6707127 (2004-03-01), Hshieh et al.
patent: 6710403 (2004-03-01), Sapp
patent: 6737704 (2004-05-01), Takemori et al.
patent: 6774408 (2004-08-01), Ninomiya
patent: 6784505 (2004-08-01), Zeng
patent: 6818946 (2004-11-01), Venkatraman
patent: 6841836 (2005-01-01), Saggio et al.
patent: 6872611 (2005-03-01), Takemori et al.
patent: 6987305 (2006-01-01), He et al.
patent: 6998678 (2006-02-01), Werner et al.
patent: 2001/0009800 (2001-07-01), Hijzen et al.
patent: 2003/0020134 (2003-01-01), Werner et al.
patent: 2004/0222457 (2004-11-01), Kim et al.
patent: 2005/0029584 (2005-02-01), Shiraishi et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 09-102602 (1997-04-01), None

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