Power metal-oxide-semiconductor field effect transistor

Details Power metal-oxide-semiconductor field effect transistor Power metal-oxide-semiconductor field effect transistor

1991-01-31

1992-12-01

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257495, H01L 2978

Patent

active

051683318

ABSTRACT:
A metal-oxide-semiconductor field effect transistor constructed in a trench or groove configuration is provided with protection against voltage breakdown by the formation of a shield region adjacent to the insulating layer which borders the gate of the transistor. The shield region is either more lightly doped than, or has a conductivity opposite to, that of the region in which it is formed, normally the drift or drain region, and it is formed adjacent to a corner on the boundary between the insulating layer and the drift or drain region, where voltage breakdown is most likely to occur.

REFERENCES:
patent: 4503449 (1985-03-01), David et al.
patent: 4553151 (1985-11-01), Schutten et al.
patent: 4835585 (1989-05-01), Panousis
patent: 4835586 (1989-05-01), Cogan et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 5072266 (1991-12-01), Buluccea et al.
Yilmaz, H. et al., Insulated Gate Transistor Physics: Modeling and Optimization of the On-State Characteristics, IEEE Transactions on Electron Devices, vol. ED-32, No. 12, Dec. 1985, pp. 2812-2818.

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