Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board
Reexamination Certificate
2006-07-25
2006-07-25
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
On insulating carrier other than a printed circuit board
C257S676000, C257S691000
Reexamination Certificate
active
07081667
ABSTRACT:
In a chip package (10, 10′, 110, 210), first and second electrical power buses (14, 14′, 16, 16′, 114, 116, 214, 216) are each formed of an electrical conductor having a chip bonding portion (20, 22, 120, 122, 220, 222) and a lead portion (26, 26′, 28, 28′, 126, 128, 226, 228) extending away from the chip bonding portion. The chip bonding portions of the first and second electrical power buses have edges (32, 34, 132, 134, 232, 234) spaced apart from one another to define an extended electrical isolation gap (40, 140, 240). A plurality of chips (42, 44, 46, 142, 143, 144, 145, 146, 147, 148, 242) straddle the extended electrical isolation gap and are electrically connected with the first and second electrical power buses to receive electrical power from the first and second electrical power buses.
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GELcore LLC
Pham Hoai
Rao Shrinivas H.
LandOfFree
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