Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000
Reexamination Certificate
active
11202968
ABSTRACT:
A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device includes a doped substrate having an epitaxial layer thereover having source and drain implant regions and body and lightly doped drain regions formed therein. The channel region and lightly doped drain regions are doped to a depth to abut the top surface of the substrate. In alternative embodiments, a buffer region of the second conductivity type and having dopant concentration greater than or equal to about the channel region is formed over the top surface of the substrate between the top surface of the substrate and the channel region and lightly doped drain region, wherein the channel region and lightly doped drain regions are doped to a depth to abut the buffer region.
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Korec Jacek
Xu Shuming
Ciclon Semiconductor Device Corp.
Duane Morris LLP
Prenty Mark V.
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