Power IC having SOI structure

Details Power IC having SOI structure Power IC having SOI structure

1997-03-27

2000-10-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257349, 257341, H01L 2701, H01L 2976

Patent

active

061304581

ABSTRACT:
The present invention relates in general to power ICs, etc. having the SOI structure, and more specifically to the structure in which an SOI substrate comprises a base substrate, an SOI oxide film formed on the base substrate, and active layers formed on the SOI oxide film, and also integrates on itself power devices and the corresponding control elements monolithically. Between this base substrate and this SOI oxide film is formed heavily-doped semiconductor regions having a conductivity type opposite to that of this base substrate. Hence, the junction capacitance between the base substrate and the heavily-doped semiconductor regions decreases an actual capacitance between the base substrate and the active layer so that to inhibit or prevent inversion layers from being formed at the bottom of the active layers.

REFERENCES:
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5200638 (1993-04-01), Kida et al.
patent: 5359219 (1994-10-01), Hwang
patent: 5525824 (1996-06-01), Himi et al.
patent: 5610426 (1997-03-01), Asai et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5801089 (1998-09-01), Kenney
patent: 5828101 (1998-10-01), Endo
patent: 5917222 (1999-06-01), Smaling et al.

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