Power IC having high-side and low-side switches in an SOI struct

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257350, 257500, 257501, 257503, 257508, H01L 2701, H01L 2712, H01L 2900

Patent

active

059397551

ABSTRACT:
A power IC having an SOI structure including at least a supporting substrate as a bottom layer, a substrate insulating film, an SOI conductive film, an SOI insulating film, and an Si film. The Si film serving as a top layer of the SOI structure is divided into a plurality of active layers by element isolation dielectric regions, and a desired semiconductor element is formed in each active layer. A total capacitance between each active layer and the supporting substrate is small and an inversion layer formed at a bottom of the active layer in the conventional SOI substrate is prevented from being induced. The power IC is constituted at least by an element A in a first active layer and an element B in a second active layer operating in association with the element A. The first active layer is electrically connected to the SOI conductive film just under the first and second active layers. A potential difference is prevented from being applied to the second active layer of the element B upon operation of the element A. With this arrangement, even if an operating voltage of the power IC is raised, independent operation of each element is retained. Furthermore, a low on-resistance of an output stage power-element is realized, and the device characteristics such as high speed operation and high conversion efficiency are provided.

REFERENCES:
patent: 4974041 (1990-11-01), Grinberg
patent: 5306942 (1994-04-01), Fujii
IEEE Transactions on electron Devices, vol. 40, No. 11, Nov. 1993, "An intelligent Power IC with Double buried-oxide layers formed by SIMOX technology" by Ohno et al., P,2074-P,2080.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power IC having high-side and low-side switches in an SOI struct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power IC having high-side and low-side switches in an SOI struct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power IC having high-side and low-side switches in an SOI struct will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-317143

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.