Power FET with shielded channels

Details Power FET with shielded channels Power FET with shielded channels

1991-11-25

1993-09-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257409, 257495, H01L 2976, H01L 2994, H01L 2358

Patent

active

052432114

ABSTRACT:
In a power FET composed of a substrate having upper and lower surfaces and having a semiconductor body providing a current flow path between the upper and lower surfaces and having at least one body region of a first conductivity type which extends to said upper surface; and at least one base region extending into the substrate from the upper surface, the base region being of a second conductivity type opposite to the first conductivity type, the base region being at least partially disposed in the current flow path and having at least two portions between which the at least one body region extends, and the FET further having an insulated gate disposed at the upper surface above the body region, the substrate further has a shielding region of the second conductivity type extending into the at least one body region from the upper surface, at a location below the gate electrode and enclosed by the base region portions, and spaced from the base region by parts of the body region of the first conductivity type. A second shielding region of the second conductivity type extends into the body region from the upper surface and extends along the peripheral edge of the substrate.

REFERENCES:
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patent: 5008725 (1991-04-01), Lidow et al.
patent: 5034785 (1991-07-01), Blanchard
patent: 5097302 (1992-03-01), Fujihira et al.
patent: 5136349 (1992-08-01), Yilmaz et al.

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