Power FET with embedded body pickup

Details Power FET with embedded body pickup Power FET with embedded body pickup

2008-01-01

2008-01-01

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07315052

ABSTRACT:
A power transistor formed on a semiconductor substrate and including a lateral array of polysilicon lines separated by alternating source and drain regions includes one or more body contact diffusion regions formed in the source regions where each body contact diffusion region has a length that extends to the edges of the two adjacent polysilicon lines, and one or more body pickup contacts where each body pickup contact is formed over a respective body contact diffusion region. In one embodiment, the body contact diffusion regions are formed in a fabrication process using ion implantation of dopants of a first type through a body diffusion mask. Each body contact diffusion region defined by an exposed area in the body diffusion mask has a drawn area that overlaps the respective two adjacent polysilicon lines.

REFERENCES:
patent: 4639754 (1987-01-01), Wheatley et al.
patent: 4951101 (1990-08-01), Alter et al.
patent: 6727547 (2004-04-01), Brisbin et al.
patent: 6946706 (2005-09-01), Brisbin et al.
patent: 2002/0076851 (2002-06-01), Eden et al.
patent: 2004/0120175 (2004-06-01), Schrom et al.
patent: 2004/0217418 (2004-11-01), Imam et al.
patent: 2006/0033171 (2006-02-01), Sutardja
patent: 2007/0037353 (2007-02-01), Sutardja
Brisbin et al. “Hot Carrier Reliability of N-LDMOS Transistor Arrays for Power BiCMOS Applications,” International Reliability Physics Symposium Proceedings 2002, pp. 105-110.

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