Power electronics power module with imbedded gate circuitry

Details Power electronics power module with imbedded gate circuitry Power electronics power module with imbedded gate circuitry

2009-05-28

2011-11-22

Vu, Bao Q (Department: 2838)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S334000

Reexamination Certificate

active

08063440

ABSTRACT:
A power electronics power module is provided. The power electronics power module includes an electrically conductive substrate, a electronic die having first and second opposing surfaces and at least one transistor formed thereon, the electronic die being mounted to the electrically conductive substrate and the at least one transistor being configured such that when the at least one transistor is activated, current flows from the first surface of the electronic die into the electrically conductive substrate, and a control member at least partially imbedded in the electrically conductive substrate, the control member having a control conductor formed thereon and electrically connected to the at least one transistor such that when a control signal is provided to the control conductor, the at least one transistor is activated.

REFERENCES:
patent: 4967246 (1990-10-01), Tanaka
patent: 7910988 (2011-03-01), Taketani
patent: 2009/0224312 (2009-09-01), Taketani

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