Power distribution for high-speed integrated circuits

Details Power distribution for high-speed integrated circuits Power distribution for high-speed integrated circuits

2011-04-05

2011-04-05

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S528000, C257SE29015, C257S501000, C361S313000, C361S762000, C361S734000

Reexamination Certificate

active

07919804

ABSTRACT:
An improved technique for power distribution for use by high speed integrated circuit devices. A mixture of high dielectric constant, Er and low Er materials are used in a dielectric layer sandwiched between the voltage and ground planes of a printed circuit board that is used to fixture one or more integrated circuit devices. The low Er material is used in an area contained by the location of the integrated circuit device and its corresponding decoupling capacitors located nearby. High Er material is used in areas between the regions of low Er material. The low Er material improves that speed at which current from an adjoining decoupling capacitor can propagate to a power pin of the integrated circuit device. The high Er material mitigates cross-coupling of noise between the low Er regions.

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