Power distribution for CMOS circuits using in-substrate...

Details Power distribution for CMOS circuits using in-substrate... Power distribution for CMOS circuits using in-substrate...

2011-03-15

2011-03-15

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S667000, C257SE21011

Reexamination Certificate

active

07906404

ABSTRACT:
A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a substrate, at least one capacitor, an active circuit and a power plane. The substrate has a first cavity formed through a first surface to a first depth and a second cavity formed through a second surface to a second depth. The first and second cavities forming a via hole through the substrate. The at least one capacitor includes a first conductive material layer deposited in the via hole, a first isolation material layer deposited over the first conductive material layer, and a second conductive material layer deposited over the first isolation material layer. The active circuit adjacent the first surface and electrically coupled to the at least one capacitor, and the power plane adjacent the second surface and electrically coupled to the at least one capacitor to provide power conditioning to the active circuit.

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patent: 6565730 (2003-05-01), Chakravorty
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patent: 2010/0001378 (2010-01-01), DeNatale et al.
patent: 2010/0110607 (2010-05-01), DeNatale et al.

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