Power devices and methods for manufacturing the same

Details Power devices and methods for manufacturing the same Power devices and methods for manufacturing the same

2005-08-23

2005-08-23

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S331000

Reexamination Certificate

active

06933560

ABSTRACT:
Power devices in which a low on-resistance can be obtained while maintaining a high breakdown voltage and a method for manufacturing the power devices are described. The power device includes a semiconductor substrate having a first conductivity type, a burying layer having a high concentration of a second conductivity type arranged deep in the semiconductor substrate, a well having a low concentration of a second conductivity type formed on the burying layer of the semiconductor substrate, a body region having a first conductivity type formed in a predetermined portion in the well having a low concentration of a second conductivity type, first and second channel stop regions having a low concentration of a second conductivity type, the first and second channel stop regions are formed in a predetermined portion of the body region and on both edges of the body region having a first conductivity type, a gate electrode including a gate insulating layer, formed on a space between the first and second channel stop regions, source and drain regions having a high concentration of a second conductivity type formed in the first and second channel stop regions on both sides of the gate electrode, and a body contact region formed in the source region. Only the body region having a first conductivity type exists between the first and second channel stop regions, and a channel is formed between the first and second channel stop regions.

REFERENCES:
patent: 5739061 (1998-04-01), Kitamura et al.

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