Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-23
1995-07-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257294, 257337, 257340, 257341, H01L 2910, H01L 2978, H01L 2714, H01L 3100
Patent
active
054303141
ABSTRACT:
The present invention provides a gate buffer region between a gate shield region and active cells of a power device. This gate buffer region may, for example, be a relatively narrow, strip-like doped region which extends into an epitaxial layer from an upper surface of the epitaxial layer. The gate shield region is connected to a source electrode of the power device via a relatively high impedance connection. The gate buffer region, on the other hand, is connected to the source electrode with a relatively low impedance connection. This relatively low impedance connection may, for example, be a substantially direct metallized connection from a metal source electrode to the gate buffer region at the surface of the epitaxial layer.
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Conference Record of the 1986 IEEE Industry Applications Society Annual Meeting, vol. 1, Oct. 1986, Denver, Colo., "Optimization of Power MOSFET Body Diode for Speed and Ruggedness", by Hamza Yilmaz et al., pp. 330-334.
"Design Optimization of Power MOSFET With Built-In Flyback Diode", by Yilmaz et al., Power Electronics Semiconductor Department, General Electric Co., Syracuse, N.Y., pp. 1-6.
"MOSPOWER Applications Handbook", Severns et al., Siliconix Incorporated, 1984, pp. 5-57 through 5-64.
"Semiconductor Power Devices", Sorab K. Ghandhi, Rensselaer Polytechnic Institute, John Wiley & Sons, N.Y., 1977, pp. 1-17 and 172-176.
Crane Sara W.
Siliconix incorporated
Wallace Valencia M.
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