Power device integration for built-in ESD robustness

Details Power device integration for built-in ESD robustness Power device integration for built-in ESD robustness

1997-02-10

1999-05-11

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257355, H01L23/62

Patent

active

059030321

ABSTRACT:
A power device having built-in ESD protection. A drain extended NMOS transistor (12) is located in a tank region (18). A silicon controlled rectifier (14) is merged with the drain extended nMOS (12) into the tank region (18). In one aspect of the invention, an anode (28) of the silicon controlled rectifier (14) is connected to a drain (24) of the drain extended nMOS (12) and a cathode (32) of the silicon controlled rectifier (14) is connected to a source (34) of the drain extended nMOS (12).

REFERENCES:
patent: 5012317 (1991-04-01), Roundtree
patent: 5319236 (1994-06-01), Fujihara

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