Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-06-11
2000-06-20
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, H01L 2362, H01L 2994
Patent
active
060780770
ABSTRACT:
A method for fabricating a field effect transistor using the supporting substrate as a device layer in accordance with the present invention comprises several steps. To fabricate the field effect transistor, an epitaxial layer is grown on one surface of a substrate having an opposing surface, the epitaxial layer forming a drain for the transistor. Once the epitaxial layer is grown, the substrate is thinned to an appropriate device thickness and then a gate and a source for the transistor are formed on the opposing surface of the substrate. In an alternative embodiment, a polysilicon layer is used instead of the epitaxial layer. A field effect transistor fabricated from the method described above includes an epitaxial layer formed on one surface of a substrate having an opposing surface, the epitaxial layer forming a drain for the transistor and a gate and a source for the transistor formed on the other surface of the substrate. Again, a polysilicon layer may be used instead of the epitaxial layer in the transistor.
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Intersil Corporation
Meier Stephen D.
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