Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-04-19
2005-04-19
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S189070, C365S226000
Reexamination Certificate
active
06882570
ABSTRACT:
Embodiments of the invention provide a power-on reset function that establishes logic circuits in a memory chip at an initial stable state and a power-on read function that triggers a read operation of the memory chip. A first voltage detector output signal transitions when a power supply voltage reaches a first voltage, setting the logic circuits at the initial stable state. A second voltage detector output signal transitions when the power supply voltage reaches a second voltage, placing a latch in a set state that results in activation of a power-on read signal. A power-on read operation is carried out according to the activation of the power-on read signal. If the power supply voltage is not lowered below the first voltage, the second voltage detector output signal does not transition. Accordingly, embodiments are capable of preventing power-on read operations that are unnecessarily performed owing to power noise.
REFERENCES:
patent: 6101127 (2000-08-01), Rolandi
patent: 6108246 (2000-08-01), Umezawa et al.
patent: 6204703 (2001-03-01), Kwon
patent: 2000-35580 (2000-06-01), None
English language of Abstract for Korean Patent Publication No. 2000-35580.
Byeon Dae-Seok
Lee Kyeong-Han
Hoang Huan
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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