Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1994-05-02
1996-09-17
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
1566271, 156345, 20419213, 20419233, 20429803, 20429832, 427 8, 118712, H05H 100
Patent
active
055565492
ABSTRACT:
The present invention relates to a system and method for control and delivery of radio frequency power in plasma process systems. The present invention monitors the power, voltage, current, phase, impedance, harmonic content and direct current bias of the radio frequency energy being delivered to the plasma chamber. In addition, the plasma mode of operation may be controlled by creating either a capacitively or inductively biased radio frequency source impedance. A radio frequency circulator prevents reflected power from the plasma chamber electrode to damage the power source and it further dissipates the reflected power in a termination resistor. The termination resistor connected to the circulator also effectively terminates harmonic energy caused by the plasma non-linearities. Multiple plasma chamber electrodes and radio frequency power sources may be similarly controlled.
REFERENCES:
patent: 4679007 (1987-07-01), Reese et al.
patent: 5175472 (1992-12-01), Johnson, Jr. et al.
Bose Frank A.
Patrick Roger
Dang Thi
LSI Logic Corporation
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